The report shows that South Korea's Samsung Electronics has made significant progress in semiconductor manufacturing, especially in its 3nm process. Although the initial yield was only 10-20%, Samsung has significantly improved the yield, currently peaking at 60%, more than three times the original figure. This progress makes Samsung more competitive in the semiconductor industry and is expected to compete with leading companies such as TSMC.

According to rumors, Samsung's second-generation 3nm process will provide excellent performance, power efficiency and area optimization, matching TSMC's cutting-edge N3P technology. Although Samsung's 3nm Gate-All-Around (GAA) process has made significant progress, it still lags behind TSMC's 3nm technology based on the existing FinFET process. However, Samsung remains optimistic about the future of its semiconductor business, expecting improvements in power efficiency and logic area over the previous generation.

At a recent annual shareholder meeting, Samsung's co-CEO Kyung Kye-hyun expressed confidence in the semiconductor unit's revenue outlook, which is expected to return to pre-2022 levels. Notably, Samsung's storage business turned profitable in January, marking a major turnaround. In addition, Samsung is actively exploring opportunities for high-bandwidth memory (HBM) and emerging high-speed interconnect protocols such as CXL (Compute Express Link) and PIM (Processor In Memory), reflecting its commitment to innovation and customer engagement.

Siyoung Choi, president of Samsung's Foundry business, stressed the company's commitment to providing stable and competitive semiconductor solutions. While acknowledging Intel's discussions on advanced process nodes, Choi confirmed Samsung's readiness for the corresponding process plan. He stressed the importance of a stable supply chain and competitive products, citing the maturity of Samsung's 4nm process yield.